Ab initio calculation of the interaction between neutral and charged silicon nanoclusters

被引:0
|
作者
Resseguier, Antoine [1 ]
Vidal, Francois [1 ]
机构
[1] Inst Natl Rech Sci, Ctr Energie Mat Telecommun, 1650 Lionel Boulet Blvd, Varennes, PQ J3X 1P7, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
silicon nanoclusters; coagulation; dusty plasma; density functional theory; PARTICLE NUCLEATION; PRESSURE; COAGULATION; GROWTH;
D O I
10.1088/1402-4896/ad8276
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In dusty plasmas, the formation of nanoclusters marks the beginning of the coagulation stage, leading to the rapid generation of larger particles. In this work, we present an overview of the interaction between silicon nanoclusters (SNCs) of about 1 nm diameter within the framework of density functional theory (DFT), taking into account chemical, van der Waals, and multipolar electrostatic interactions. Two types of SNCs are considered: particles composed entirely of silicon (Si-30, Si-40, Si-50, Si-60) and a particle whose dangling bonds are occupied by hydrogen atoms (Si29H24). The interaction energies obtained between two neutral or weakly charged SNCs all have a repulsive part at a short separation distance, followed by a minimum corresponding to a stable state of coagulation due to chemical bonds between the particles. In particular, our calculations show that: (1) the Hamaker constant (which characterizes the London-type van der Waals interaction) depends on the pair of identical SNCs, (2) the multipolar electrostatic contribution at large separation distances allows the extraction of the charged SNC polarization coefficient, and (3) the coagulation rates between SNCs are significantly higher than previously estimated.
引用
收藏
页数:11
相关论文
共 50 条
  • [1] Ab initio calculation of neutral and singly charged Mgn (n ≤ 11) clusters
    Zhang, Jian-Min
    Duan, Ying-Ni
    Xu, Ke-Wei
    Ji, Vincent
    Man, Zhen-Yong
    PHYSICA B-CONDENSED MATTER, 2008, 403 (18) : 3119 - 3124
  • [2] The roles of charged and neutral oxidising species in silicon oxidation from ab initio calculations
    Szymanski, MA
    Stoneham, AM
    Shluger, A
    MICROELECTRONICS RELIABILITY, 2000, 40 (4-5) : 567 - 570
  • [3] Interaction between multiply charged manganese nanoclusters and sulfur atoms in silicon
    Saparniyazova, Z. M.
    Bakhadyrkhanov, M. K.
    Sattarov, O. E.
    Iliev, Kh M.
    Ismailov, K. A.
    Norkulov, N.
    Asanov, D. Zh
    INORGANIC MATERIALS, 2012, 48 (04) : 325 - 328
  • [4] Interaction between multiply charged manganese nanoclusters and sulfur atoms in silicon
    Z. M. Saparniyazova
    M. K. Bakhadyrkhanov
    O. E. Sattarov
    Kh. M. Iliev
    K. A. Ismailov
    N. Norkulov
    D. Zh. Asanov
    Inorganic Materials, 2012, 48 : 325 - 328
  • [5] Ab initio calculation of magnetic structure of small iron nanoclusters
    Sipr, O
    Kosuth, M
    Ebert, H
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2004, 272 : 713 - 714
  • [6] Ab initio calculation of the hydrogen molecule in silicon
    Nakamura, KG
    Ishioka, K
    Kitajima, M
    Murakami, K
    SOLID STATE COMMUNICATIONS, 1997, 101 (10) : 735 - 738
  • [7] Interaction between single vacancies in graphene sheet: An ab initio calculation
    Scopel, W. L.
    Paz, Wendel S.
    Freitas, Jair C. C.
    SOLID STATE COMMUNICATIONS, 2016, 240 : 5 - 9
  • [8] Ab initio calculation on molecule interaction between benzene halide with water
    Zhao, BZ
    Chu, B
    Su, ZM
    Wang, RS
    CHEMICAL JOURNAL OF CHINESE UNIVERSITIES-CHINESE, 1998, 19 (10): : 1674 - 1676
  • [9] Ab initio calculation of titanium silicon carbide
    Sun, ZM
    Zhou, YC
    PHYSICAL REVIEW B, 1999, 60 (03): : 1441 - 1443
  • [10] Ab initio calculations for the neutral and charged O vacancy in sapphire
    Xu, YN
    Gu, ZQ
    Zhong, XF
    Ching, WY
    PHYSICAL REVIEW B, 1997, 56 (12): : 7277 - 7284