Phonon growth characteristics in one-dimensional cylindrical quantum wires at low lattice temperatures

The phonon growth characteristics in a cylindrical quantum wire structure has been theoretically analysed here under the condition of low lattice temperature. The present theory takes into account the effects of finite barrier height, energy band non-parabolicity of the material and the non-zero values of the transverse components of the phonon wave vector. At the low lattice temperatures again, the interaction of the non-equilibrium electrons with acoustic phonons becomes inelastic and consequently the phonon distribution cannot be approximated by the simple equipartition law. Hence the full form of the Bose-Einstein distribution for the phonon ensemble is taken into consideration. The numerical results that follow from the present theory for the wire samples of GaAs/ Ga0.7Al0.3As and Ga0.47In0.53As/InP turn out to be quite different from what follows in the traditional simplified framework.