Surface Potential Based E-mode p-GaN HEMT Device Model

被引：0
|
作者：
Ge C. [1 ]
Li S. [2 ]
Zhang C. [2 ]
Liu S.-Y. [2 ]
Sun W.-F. [1 ,2 ]
机构：
[1] School of Microelectronic, Southeast University, Jiangsu, Wuxi
[2] School of Electronic Engineering, Southeast University, Jiangsu, Nanjing
来源：
Tien Tzu Hsueh Pao/Acta Electronica Sinica | 2022年 / 50卷 / 05期
关键词：
advanced simulation program with integrated circuit emphasis model; enhancement-mode; gate capacitance; gate current; output characteristics; p-GaN gate; transfer characteristics;
D O I：
10.12263/DZXB.20210737
中图分类号：
学科分类号：
摘要：
To meet the requirements for the power circuit and system design for enhancement-mode p-GaN HEMT (High Electron Mobility Transistor) device SPICE(Simulation Program with Integrated Circuit Emphasis) models, a model of enhancement-mode p-GaN HEMT device based on the surface potential calculation method is proposed in the paper. According to the comparison between the structures of the depletion-mode GaN HEMT device and the enhancement-mode p-GaN HEMT device, analytical formulas for the voltage of the p-GaN gate structure are derived. Considering the doping effect of p-GaN gate and physical mechanism, analytical formulas for the gate current and gate capacitance are derived. At the same time, combined with the ASM(Advanced SPICE Model) core, a complete SPICE model of enhancement-mode p-GaN HEMT power device is established. The established SPICE model is compared and verified with the measured results. The results show that the proposed model accurately realizes the electrical characteristics of p-GaN HEMT device including transfer characteristics, output characteristics, gate capacitance, and gate current. The simulation data of the model fits the measured data of the actual enhancement-mode p-GaN HEMT device well, and the fitting errors of the model simulation data and the measured data are less than 5%. The enhancement-mode p-GaN HEMT device model proposed in the paper, which is based on the perfect ASM-HEMT and considers the doping effect of p-GaN layer and physical mechanism of p-GaN gate structure, has important application value in circuit design. © 2022 Chinese Institute of Electronics. All rights reserved.
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页码：1227 / 1233
页数：6
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