Multifunctional near-infrared polarized photodetector driven by the anisotropic photogalvanic effect in a two-dimensional MnSSe/TaIrS4/MnSSe magnetic tunnel junction

被引:0
|
作者
Xu, Degao [1 ]
Tan, Jianing [1 ]
Ge, Meng [1 ]
Yang, Guowei [2 ]
Ouyang, Gang [1 ]
机构
[1] Hunan Normal Univ, Sch Phys & Elect, Key Lab Matter Microstruct & Funct Hunan Prov, Key Lab Low Dimens Quantum Struct & Quantum Contro, Changsha 410081, Peoples R China
[2] Sun Yat Sen Univ, Nanotechnol Res Ctr, Sch Mat Sci & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
来源
PHYSICAL REVIEW APPLIED | 2024年 / 22卷 / 05期
关键词
INTRINSIC FERROMAGNETISM; SPIN; MAGNETORESISTANCE; GENERATION;
D O I
10.1103/PhysRevApplied.22.054042
中图分类号
O59 [应用物理学];
学科分类号
摘要
Traditional polarized photodetectors have faced critical challenges, such as limited functionality, integration complexities, and subpar photosensitivity. In this study, we propose a kind of multifunctional coupled polarized photodetector based on an anisotropic MnSSe/TaIrS4/MnSSe lateral magnetic tunnel and multichannel optical communication induced by the photogalvanic effect. Profiting from the synergistic interplay between optical transition and spin-tunneling selection rules within the MTJ, seamless toggling between perfect spin filtering and pure spin current can be achieved in the self-powered mode. Furthermore, the remarkable performance metrics, including an anisotropy ratio of 481.84, an extinction ratio of 725.43, and a tunneling magnetoresistance ratio of 100%, underscore the exceptional capabilities of the multifunctional polarized photodetector. Building upon these achievements, a proof-of-concept three-channel optical communication scheme is shown to amplify the output efficiency of binary signals by an additional 50%. Our research provides insights into the development of multifunctional and highperformance photodetectors and presents an interesting platform for advancing coupled optoelectronic and spintronic applications.
引用
收藏
页数:13
相关论文
共 2 条
  • [1] Multifunctional Two-Dimensional VSi2N4/WSi2N4/VSi2N4 Photodetector Driven by the Photogalvanic Effect
    Shu, Li
    Qian, Liyu
    Ye, Xiang
    Xie, Yiqun
    PHYSICAL REVIEW APPLIED, 2022, 17 (05)
  • [2] Theoretical Design of a Multifunctional Two-Dimensional HfGeTe4-Based Optoelectronic Device Utilizing the Anisotropic Photogalvanic Effect
    Xu, Degao
    Ru, Jindou
    Cai, Biao
    Tan, Jianing
    Yang, Kaike
    Yang, Guowei
    Ouyang, Gang
    PHYSICAL REVIEW APPLIED, 2023, 20 (05)