Effect of radical on defect and molecular structure of monolayer MoS2 by low temperature plasma treatment

被引：0
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作者：
Asada, Shuya [1 ]
Ogino, Akihisa [1 ]
机构：
[1] Graduate School of Integrated Science and Technology, Shizuoka University, Shizuoka, Hamamatsu,432-8561, Japan
来源：
Japanese Journal of Applied Physics | 2022年 / 61卷 / SI期
关键词：
Compilation and indexing terms; Copyright 2024 Elsevier Inc;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Molecular structure - X ray photoelectron spectroscopy - Argon - Plasma applications - Temperature - Layered semiconductors - Monolayers - Etching
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