Establishing the temperature and orientation dependence of the threshold displacement energy in ThO2 via molecular dynamics simulations

ThO2 is a promising fuel for next-generation nuclear reactors. As a critical quantity measuring its radiation tolerance, the dependence of the threshold displacement energy on temperature and crystal orientation in ThO2 is unclear and established using comprehensive molecular dynamics simulations in this work. For both Th and O primary knock-on atoms (PKAs), the thresholds, denoted as ETh different interatomic potentials. Similar temperature and orientation dependence are observed, albeit with some quantitative differences. While on average over all orientations, higher energy is required for Th PKAs than O PKAs to displace atoms, the polar-averaged EThd is significantly lower than that for EOd . Further, ETh different crystal orientation dependence and temperature dependence. Notably, the cubic symmetry in the fluorite structure is followed by EThd , but does not hold for EOd because of the existence of two sublattices. The much higher average EOd than EThd and their different temperature dependence are interpreted by the distinct recombination rates of Th and O Frenkel pairs in thermal spikes, resulting from the substantially lower migration barriers of O vacancies and interstitials. The recombination of O vacancies and interstitials, both of which are charged, is further enhanced by the Coulomb interaction at small Frenkel pair separations. The new findings are discussed for their generality in fluorite-structured oxides by comparing the results in ThO2 and UO2.