The effects of hydrogen on the electronic properties of silicon

被引：0
|
作者：
Louhibi, S. [1 ]
Sekkal, N. [1 ,2 ,3 ,4 ]
Benkhettou, N. [3 ]
Chabane-Sari, N.E. [5 ]
机构：
[1] Dept. de Sciences Exactes, Ecl. Normale Sup. l'Enseignement T., BP 1523, El M'naouer, 31000, Oran, Algeria
[2] Compl. Materials Science Laboratory, Département de Physique, Univ. de Sidi Bel Abbes, 22000, Sidi Bel Abbès, Algeria
[3] Applied Materials Laboratory, Centre de Recherches (Ex-CFTE), Univ. de Sidi Bel Abbes, 22000, Sidi Bel Abbès, Algeria
[4] Physia-Laboratory, BP 47 (RP), 22000, Sidi Bel Abbès, Algeria
[5] Département de Physique, Institut de Sciences Exactes, Université de Tlemcen, 13000, Tlemcen, Algeria
来源：
Superlattices Microstruct | / 2卷 / 115-126期
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Crystalline materials - Electronic properties - Hydrogen - Perturbation techniques - Semiconductor quantum wires
引用
收藏
相关论文
共 50 条
  • [1] The effects of hydrogen on the electronic properties of silicon
    Louhibi, S
    Sekkal, N
    Benkhettou, N
    Chabane-Sari, NE
    SUPERLATTICES AND MICROSTRUCTURES, 2005, 37 (02) : 115 - 126
  • [2] Effects of hydrogen atoms on the electronic structure and transport properties of silicon monatomic chains
    Shen, Xin
    Hou, Shimin
    Qian, Zekan
    Zhao, Xingyu
    Wu, Jinlei
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2009, 41 (05): : 865 - 869
  • [3] Microstructural, electrical and electronic properties of hydrogen implanted silicon
    Kishore, R
    PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2, 1998, 3316 : 644 - 647
  • [4] The electronic properties of transition metal hydrogen complexes in silicon
    Jones, R
    Resende, A
    Öberg, S
    Briddon, PR
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 58 (1-2): : 113 - 117
  • [5] Electronic properties of transition metal hydrogen complexes in silicon
    Jones, R.
    Resende, A.
    Öberg, S.
    Briddon, P.R.
    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 58 (01): : 113 - 117
  • [6] The effects of hydrogen profiling and of light-induced degradation on the electronic properties of hydrogenated nanocrystalline silicon
    Halverson, AF
    Gutierrez, JJ
    Cohen, JD
    Yan, BJ
    Yang, J
    Guha, S
    Amorphous and Nanocrystalline Silicon Science and Technology-2005, 2005, 862 : 481 - 486
  • [7] ELECTRONIC-PROPERTIES OF HYDROGEN-DERIVED COMPLEXES IN SILICON
    CHADI, DJ
    PARK, CH
    PHYSICAL REVIEW B, 1995, 52 (12): : 8877 - 8880
  • [8] Structural and electronic properties of carbon-hydrogen complex in silicon
    Kaneta, Chioko
    Katayama-Yoshida, Hiroshi
    Materials Science Forum, 1995, 196-201 (pt 2) : 897 - 902
  • [9] Electronic and optical properties of agglomerated hydrogen terminated silicon nanoparticles
    Francis, Priya
    Patil, Sumati
    Rajesh, Chiranjib
    Chakraborty, Sudip
    Mahamuni, Shailaja
    Dharmadhikari, Chandrakant V.
    Ghaisas, Subhash V.
    EUROPEAN PHYSICAL JOURNAL D, 2013, 67 (07): : 1 - 8
  • [10] Electronic and optical properties of agglomerated hydrogen terminated silicon nanoparticles
    Priya Francis
    Sumati Patil
    Chiranjib Rajesh
    Sudip Chakraborty
    Shailaja Mahamuni
    Chandrakant V. Dharmadhikari
    Subhash V. Ghaisas
    The European Physical Journal D, 2013, 67
12345