Demonstration of β-(AlxGa1-x)2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy

被引：1
|
作者：
机构：
[1] [1,Ahmadi, Elaheh
[2] Koksaldi, Onur S.
[3] Zheng, Xun
[4] Mates, Tom
[5] Oshima, Yuichi
[6] Mishra, Umesh K.
[7] Speck, James S.
来源：
| 2017年 / Japan Society of Applied Physics卷 / 10期
关键词：
701.1 Electricity: Basic Concepts and Phenomena - 714.2 Semiconductor Devices and Integrated Circuits - 741.3 Optical Devices and Systems - 931.3 Atomic and Molecular Physics - 933.1.2 Crystal Growth;
D O I：
071101
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学科分类号：
摘要：
20
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