Lattice parameter deviation of InP single crystals grown by the horizontal Bridgman method under controlled phosphorus vapor pressure

被引：0
|
作者：
Shimizu, Atsushi [1 ]
Nishizawa, Jun-Ichi [1 ,2 ]
Oyama, Yutaka [1 ,2 ,3 ]
Suto, Ken [1 ,2 ,3 ]
机构：
[1] Sendai Research Center, Telecommunications Advancement Organization of Japan, 519 Aoba Aramaki, Aoba-ku, Sendai 980-0845, Japan
[2] Semiconductor Research Institute of Semiconductor Research Foundation, Kawauchi, Aoba-ku, Sendai 980-0862, Japan
[3] Department of Materials Science and Engineering, Graduate School of Engineering, Tohoku University, Aramaki, Aoba-ku, Sendai 980-8579, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2001年 / 40卷 / 4 A期
关键词：
D O I：
10.1143/jjap.40.2219
中图分类号：
学科分类号：
摘要：
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页码：2219 / 2220
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