Heteroepitaxial diamond growth on pre-deposited β-SiC oriented layer on Si(001) substrate

被引:0
|
作者
He, Xianchang
Shen, Hesheng
Zhang, Zhiming
Wan, Yongzhong
Shen, Ting
机构
来源
Wuli Xuebao/Acta Physica Sinica | 2000年 / 49卷 / 03期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:532 / 537
相关论文
共 50 条
  • [1] Heteroepitaxial diamond growth on pre-deposited β-SiC oriented layer on Si(001) substrate
    He, XC
    Shen, HS
    Zhang, ZM
    Wan, YZ
    Shen, T
    ACTA PHYSICA SINICA, 2000, 49 (03) : 532 - 537
  • [2] INITIAL GROWTH OF HETEROEPITAXIAL DIAMOND ON SI(001) SUBSTRATES VIA BETA-SIC BUFFER LAYER
    SUESADA, T
    NAKAMURA, N
    NAGASAWA, H
    KAWARADA, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1995, 34 (9A): : 4898 - 4904
  • [3] Effect of very thin SiC layer on heteroepitaxial growth of cubic GaN on Si (001)
    Hiroyama, Yuichi
    Tamura, Masao
    1998, JJAP, Tokyo (37):
  • [4] Effect of very thin SiC layer on heteroepitaxial growth of cubic GaN on Si (001)
    Hiroyama, Y
    Tamura, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (6A): : L630 - L632
  • [5] Heteroepitaxial InP growth on a Si(001) substrate using a Ge buffer layer in MOCVD
    Shin, Keun Wook
    Lee, Sang-Moon
    Lee, Kiyoung
    Yoon, Euijoon
    2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM, 2023,
  • [6] Heteroepitaxial growth of InSb films on a Si(001) substrate via AlSb buffer layer
    Mori, M
    Akae, N
    Uotani, K
    Fujimoto, N
    Tambo, T
    Tatsuyama, C
    APPLIED SURFACE SCIENCE, 2003, 216 (1-4) : 569 - 574
  • [7] Influence of a pre-deposited carbon submonolayer on the Ge island nucleation on Si(001)
    Dentel, D
    Bischoff, JL
    Kubler, L
    Stoffel, M
    Castelein, G
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (09) : 5069 - 5074
  • [8] SIMULATIONS AND EXPERIMENTS OF SIC HETEROEPITAXIAL GROWTH ON SI(001) SURFACE
    KITABATAKE, M
    DEGUCHI, M
    HIRAO, T
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (07) : 4438 - 4445
  • [9] Heteroepitaxial growth of GaN on Si substrate coated with a thin flat SiC buffer layer
    Wang, D
    Yoshida, S
    Hiroyama, Y
    Ichikawa, M
    PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 : 355 - 358
  • [10] Heteroepitaxial growth of MgO films on Si(001) substrates using cubic SiC as a buffer layer
    Lee, SY
    Lee, SH
    Nah, EJ
    Lee, SS
    Kim, Y
    JOURNAL OF CRYSTAL GROWTH, 2002, 236 (04) : 635 - 639