Magnetron Sputtering Deposition of Magnesium-Gallium Co-doped Transparent Zinc Oxide Semiconductor Thin Films and Their Properties

被引：0
|
作者：
Kang H. [1 ]
Lu Z. [1 ]
Zhong Z. [1 ,2 ]
Long H. [1 ]
机构：
[1] College of Electronic Information Engineering, South-Central University for Nationalities, Wuhan
[2] Hubei Key Laboratory of Intelligent Wireless Communications, South-Central University for Nationalities, Wuhan
来源：
Cailiao Daobao/Materials Review | 2018年 / 32卷 / 06期
关键词：
Doping; Magnetron sputtering; Optoelectronic performance; Transparent semiconductor film; Zinc oxide;
D O I：
10.11896/j.issn.1005-023X.2018.11.024
中图分类号：
学科分类号：
摘要：
Magnesium and gallium co-doped zinc oxide (MGZO) thin films were deposited onto quartz glass substrates by magnetron sputtering technique using a sintered ceramic target of MgO:Ga2O3:ZnO (2wt%:2wt%:96wt%). The effects of sputtering pressure on structural, electrical and optical properties of the deposited films were investigated by XRD, SEM, spectrophotometer and Hall effect measurement system. The results showed that all the obtained films are polycrystalline with a hexagonal wurtzite structure and grow preferentially in the (002) orientation. The sputtering pressure significantly affects the microstructure and optoelectronic characteristics, but hardly the optical bandgaps of the deposited films. The most favorable optoelectronic performance was observed in the MGZO thin film deposited at the sputtering pressure of 3.5 Pa, as it possesses the best crystal quality, the minimum tensile stress (8.29×10-2 GPa), the lowest electrical resistivity (1.62×10-3 Ω•cm), the highest average visible transmittance (87.8%) and the maximum figure of merit (4.76×103 Ω-1•cm-1). In addition, the optical bandgaps of the produced thin films were evaluated by extrapolation method and determined to be in the range of 3.41-3.44 eV which are hardly affected by the sputtering pressure. © 2018, Materials Review Magazine. All right reserved.
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页码：1938 / 1942
页数：4
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