Observation of deep levels in SiC by optical-isothermal capacitance transient spectroscopy

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[1] [1,3,Kobayashi, Setsuko
[2] 1,3,Imai, Seiji
[3] Hayami, Yasuaki
[4] 1,3,Kushibe, Mitsuhiro
[5] 1,3,Shinohe, Takashi
[6] 1,Okushi, Hideyo
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Kobayashi, Setsuko | 2000年 / Trans Tech Publ Ltd, Uetikon-Zuerich, Switzerland卷 / 338期
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