Impact of Gate-Loop Parameters on the Switching Behavior of SiC MOSFETs

被引：0
|
作者：
Wang X. [1 ]
Zhu Y. [1 ]
Zhao Z. [1 ]
Chen K. [1 ]
机构：
[1] State Key Lab of Control and Simulation of Power Systems and Generation Equipments, Department of Electrical Engineering, Tsinghua University, Beijing
来源：
Zhao, Zhengming (zhaozm@tsinghua.edu.cn) | 2017年 / China Machine Press卷 / 32期
关键词：
Parasitic parameters; Pulse; SiC MOSFET; Switching behavior;
D O I：
10.19595/j.cnki.1000-6753.tces.170389
中图分类号：
学科分类号：
摘要：
The switching behavior of Silicon Carbide (SiC) MOSFETs is susceptible to the parasitic elements in the system. It manifests non-ideal characteristics of the power pulses, and further limits the system reliability and efficiency. The relationship among the control pulse, the drive pulse and the power pulse is analyzed. Two parameters dv/dt and di/dt are extracted as two critical factors affecting the switching behavior of SiC MOSFETs. The impacts of the gate-loop parameters on dv/dt and di/dt are analyzed theoretically and verified through PSpice simulation and experiments. Furthermore, several transient control methods based on the gate-loop parameters are compared, as a guideline for the control of the switching behavior of SiC MOSFETs in real applications. © 2017, The editorial office of Transaction of China Electrotechnical Society. All right reserved.
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页码：23 / 30
页数：7
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