Saturation of THz-radiation from femtosecond-laser irradiated InAs in a high magnetic field

被引：0
|
作者：
Ohtake, Hideyuki [1 ]
Sakai, Masahiro [1 ]
Liu, Zhenlin [1 ]
Sarukura, Nobuhiko [1 ]
Ono, Shingo [1 ]
Tsukamoto, Takeyo [1 ]
机构：
[1] Inst for Molecular Science (IMS), Okazaki, Japan
来源：
Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series | 2000年
关键词：
Bolometers - Carrier concentration - Interferometers - Irradiation - Laser pulses - Magnetic field effects - Permanent magnets - Semiconducting indium compounds - Temperature;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Evidence is given on of the THz-radiation power on the applied magnetic field. The optimum magnetic field was found to be 3 T. Interesting dependence of the frequency and the spectral width of the radiation was also observed.
引用
收藏
页码：192 / 193
相关论文
共 50 条
  • [1] Saturation of THz-radiation power from femtosecond-laser-irradiated InAs in a high magnetic field
    Ohtake, H
    Ono, S
    Sakai, M
    Liu, ZL
    Tsukamoto, T
    Sarukura, N
    APPLIED PHYSICS LETTERS, 2000, 76 (11) : 1398 - 1400
  • [2] Development of intense and compact THz-radiation source using femtosecond-laser irradiated InAs emitter in a high magnetic field
    Ohtake, H
    Ono, S
    Sakai, M
    Kawahata, E
    Kozeki, T
    Murakami, H
    Liu, ZL
    Tsukamoto, T
    Sarukura, N
    JOURNAL OF THE CHINESE CHEMICAL SOCIETY, 2000, 47 (4A) : 609 - 614
  • [3] Femtosecond-laser-irradiated, magnetic-field enhanced, InAs THz-radiation emitter and its saturation effect in high magnetic field
    Ohtake, H
    Ono, S
    Sakai, M
    Liu, ZL
    Murakami, H
    Sarukura, N
    NONLINEAR OPTICS: MATERIALS, FUNDAMENTALS, AND APPLICATIONS, 2000, 46 : 59 - 61
  • [4] Optimum geometrical conditions for femtosecond-laser-irradiated, magnetic-field enchanced, THz-radiation InAs emitter and its saturation effect in high magnetic field
    Ohtake, H
    Ono, S
    Sakai, M
    Liu, ZL
    Murakami, H
    Sarukura, N
    ULTRAFAST PHENOMENA XII, 2001, 66 : 209 - 211
  • [5] Spectrum control of intense THz-radiation from InAs under magnetic field irradiated with stretched femtosecond laser pulses
    Ohtake, H
    Liu, Z
    Izumida, S
    Ono, S
    Sarukura, N
    ULTRAFAST PHENOMENA XI, 1998, 63 : 202 - 204
  • [6] Intense THz-radiation from semiconductors under magnetic field irradiated with femtosecond laser pulses
    Liu, ZL
    Ohtake, H
    Izumida, S
    Ono, S
    Sarukura, N
    OPTICAL AND QUANTUM ELECTRONICS, 2000, 32 (4-5) : 521 - 529
  • [7] Intense THz-radiation from semiconductors under magnetic field irradiated with femtosecond laser pulses
    Zhenlin Liu
    Hideyuki Ohtake
    Shinji Izumida
    Shingo Ono
    Nobuhiko Sarukura
    Optical and Quantum Electronics, 2000, 32 : 521 - 529
  • [8] Intense THz radiation from InAs irradiated with femtosecond laser pulses in a magnetic field
    Sarukura, N
    Ohtake, H
    Murakami, H
    Ono, S
    Tsukamoto, T
    2000 25TH INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES CONFERENCE DIGEST, 2000, : 63 - 64
  • [9] Magnetic-field-induced enhancement of THz-radiation power from femtosecond-laser-irradiated InAs up to 27 T
    Takahashi, H., 1600, Japan Society of Applied Physics (42):
  • [10] Intense THz radiation from femtosecond-laser-irradiated InAs and its geometrical dependent saturation effect in high magnetic field
    Ono, S
    Tsukamoto, T
    Ohtake, H
    Sakai, M
    Murakami, H
    Sarukura, N
    ULTRAFAST ELECTRONICS AND OPTOELECTRONICS, PROCEEDINGS, 2001, 49 : 100 - 103
12345