Experimental study on the activation process of GaAs spin-polarized electron source

被引：10
|
作者：
Ruan, Cun-Jun [1 ]
机构：
[1] Department of Physics, Tsinghua University, Beijing 100084, China
来源：
| 2003年 / Institute of Physics Publishing卷 / 12期
关键词：
Activation processes - Nagative electron affinity - Semiconductor crystals - Spin-polarized electron source;
D O I：
10.1088/1009-1963/12/5/304
中图分类号：
学科分类号：
摘要：
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