Process conditions for improvement of electrical properties of Al 2O3/n-GaN structures prepared by atomic layer deposition

被引：0
|
作者：
Hori, Yujin [1 ]
Mizue, Chihoko [1 ]
Hashizume, Tamotsu [1 ,2 ]
机构：
[1] Graduate School of Information Science and Technology, Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan
[2] Japan Science and Technology Agency (JST), CREST, Tokyo 102-0075, Japan
来源：
Japanese Journal of Applied Physics | 2010年 / 49卷 / 8 PART 1期
关键词：
Compilation and indexing terms; Copyright 2025 Elsevier Inc;
D O I：
080201
中图分类号：
学科分类号：
摘要：
Current voltage characteristics - Interface states - Alumina - Silicon nitride - III-V semiconductors - Aluminum oxide - Atomic layer deposition - Atoms
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