Schottky Diodes Based on Amorphous Ga2O3 Thin Films by UV-Ozone Treatment

被引：0

作者：

Chen, Limeng ^{[1
]}

Miao, Guangtan ^{[1
]}

Xie, Hongfu ^{[1
]}

Xiao, Wenlan ^{[1
]}

Liu, Guoxia ^{[1
]}

Shan, Fukai ^{[1
]}

机构：

[1] Qingdao Univ, Coll Microtechnol & Nanotechnol, Qingdao 266071, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2024年 / 71卷 / 11期

基金：

中国国家自然科学基金;

关键词：

Nickel; Schottky diodes; Electric potential; Anodes; Sputtering; Schottky barriers; Junctions; Amorphous oxide semiconductor (AOS); Ga2O3; Schottky barrier diode (SBD); UV-ozone (UVO) treatment;

D O I：

10.1109/TED.2024.3456772

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this report, amorphous Ga(2)O(3 )thin film was prepared by magnetron sputtering, and the Schottky barrier diodes (SBDs) based on amorphous Ga(2)O(3 )thin films were fabricated. The electrical performances of the SBDs based on amorphous Ga2O3 thin films with different UV-ozone (UVO) treatment conditions were systematically studied. It is found that the oxygen vacancies at the interface of the SBDs can be suppressed by the UVO treatment. The UVO-optimized SBDs exhibit superior electrical performance, including the near-unity ideality factor of 1.12, a Schottky barrier height of 1.05 eV, and a high rectification ratio of 7.08 x 10(8). This method confirms the great potential for SBDs based on amorphous oxide semiconductors (AOSs) in the future.

引用

页码：6910 / 6914

页数：5

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