1.55 μm wavelength strain-compensated InxGa1-xAs/InyAl1-yAs electroabsorption modulators with high extinction ratio and low polarization-dependent loss

被引：0
|
作者：
Kim, Tae Whan [1 ]
Lee, Dea Uk [1 ]
Choo, Dong Chul [1 ]
Kim, Jae Ho [1 ]
Jung, Min [1 ]
Kim, Moon Deock [2 ]
Jeong, Hyeon Don [2 ]
Yoo, Keon-Ho [3 ]
Kim, Jin Young [4 ]
Lim, Han-Jo [5 ]
机构：
[1] Department of Physics, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul 139-701, Korea, Republic of
[2] Photonics Laboratory, Materials and Device Sector, Samsung Advanced Institute of Technology, Suwon 440-600, Korea, Republic of
[3] Department of Physics, Kyung Hee University, Seoul 137-701, Korea, Republic of
[4] Department of Electronic Materials Engineering, Kwangwoon University, 447-1 Wolgye-dong, Nowonku, Seoul 139-701, Korea, Republic of
[5] Department of Electronics Engineering, Ajou University, Suwon 442-749, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2001年 / 40卷 / 5 A期
关键词：
Electroabsorption modulators - High extinction ratios;
D O I：
10.1143/jjap.40.3120
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：3120 / 3123
相关论文
共 17 条
  • [1] 1.55 μm wavelength strain-compensated InxGa1-xAs/InyAl1-yAs electroabsorption modulators with high extinction ratio and low polarization-dependent loss
    Kim, TW
    Lee, DU
    Choo, C
    Kim, JH
    Jung, M
    Kim, MD
    Jeong, HD
    Yoo, KH
    Kim, JY
    Lim, HJ
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (5A): : 3120 - 3123
  • [2] Design of strain-compensated InxGa1-xAs/InyAl1-yAs quantum cascade laser structures towards the shorter wavelengths
    Y. H. Ko
    J. S. Yu
    Optical and Quantum Electronics, 2009, 41 : 811 - 818
  • [3] Microstructural and optical properties of strain compensated InxGa1-xAs/InyAl1-yAs multiple quantum wells
    Kim, TW
    Lee, DU
    Choo, DC
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2002, 63 (01) : 89 - 93
  • [4] Strain effects in lattice-mismatched InxGa1-xAs/InyAl1-yAs coupled double quantum wells
    Kim, TW
    Jung, M
    Lee, DU
    Lim, YS
    Lee, JY
    APPLIED PHYSICS LETTERS, 1998, 73 (01) : 61 - 63
  • [5] STRAIN-SYMMETRIZED INXGA1-XAS/INYAL1-YAS HEMTS WITH EXTREMELY HIGH 2DEG DENSITIES AND MOBILITIES
    KLEIN, W
    BOHM, G
    HEISS, H
    KRAUS, S
    XU, D
    SEMERAD, R
    TRANKLE, G
    WEIMANN, G
    COMPOUND SEMICONDUCTORS 1994, 1995, (141): : 673 - 678
  • [6] Composition and strain dependence of band offsets at metamorphic InxGa1-xAs/InyAl1-yAs heterostructures -: art. no. 205303
    Stroppa, A
    Peressi, M
    PHYSICAL REVIEW B, 2005, 71 (20):
  • [7] Very high electron mobilities at low temperatures in InxGa1-xAs/InyAl1-yAs HEMTs grown lattice-mismatched on GaAs substrates
    Gozu, S
    Tsuboki, K
    Hayashi, M
    Hong, CL
    Yamada, S
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 749 - 752
  • [8] Pseudomorphic InxGa1-xAs/InyAl1-yAs high electron mobility transistor structures grown by solid source molecular beam epitaxy
    Zheng, HQ
    Radahakrishnan, K
    Yoon, SF
    Ng, GI
    ADVANCED MICROELECTRONIC PROCESSING TECHNIQUES, 2000, 4227 : 25 - 28
  • [9] OPTIMAL EPILAYER THICKNESS FOR INXGA1-XAS AND INYAL1-YAS COMPOSITION MEASUREMENT BY HIGH-RESOLUTION X-RAY-DIFFRACTION
    BENNETT, BR
    DELALAMO, JA
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (12) : 8304 - 8308
  • [10] Well surface roughness and fault density effects on the Hall mobility of InxGa1-xAs/InyAl1-yAs/InP high electron mobility transistors
    Peiro, F.
    Ferrer, J.C.
    Cornet, A.
    Morante, J.R.
    Beck, M.
    Py, M.A.
    Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1997, 15 (05):
12