Erratum: Lattice vacancies in silicon film exposed to external electric field (Journal of Applied Physics (2013) 114 (043713))

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20142717883213

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[1] [1,Mao, Yuliang

[2] Caliste, Damien

[3] Pochet, Pascal

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| 1600年 / American Institute of Physics Inc.卷 / 115期

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Erratum (ER)

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共 11 条

[1] Lattice vacancies in silicon film exposed to external electric field (vol 114, 043713, 2013)
Mao, Yuliang
Caliste, Damien
Pochet, Pascal
JOURNAL OF APPLIED PHYSICS, 2014, 115 (23)
[2] Lattice vacancies in silicon film exposed to external electric field
Mao, Yuliang
Caliste, Damien
Pochet, Pascal
JOURNAL OF APPLIED PHYSICS, 2013, 114 (04)
[3] Erratum: Applications of electrostatic capacitance and charging (Journal of Applied Physics (2013) 114 (224904))
1600, American Institute of Physics, 2 Huntington Quadrangle, Suite N101, Melville, NY 11747-4502, United States (115):
[4] Erratum: Stability analysis of current-driven domain wall in the presence of spin Hall effect (Journal of Applied Physics (2013) 114 (093912))
1600, American Institute of Physics, 2 Huntington Quadrangle, Suite N101, Melville, NY 11747-4502, United States (114):
[5] Erratum: Thermochromic VO2 nanorods made by sputter deposition: Growth conditions and optical modeling (Journal of Applied Physics (2013) 114 (033516))
Li, S.-Y. (Shuyi.Li@angstrom.uu.se), 1600, American Institute of Physics, 2 Huntington Quadrangle, Suite N101, Melville, NY 11747-4502, United States (114):
[6] Erratum: Investigation of low field dielectric properties of anisotropic porous Pb(Zr,Ti)O3 ceramics: Experiment and modeling (Journal of Applied Physics (2013) 114 (214101))
Olariu, C.S.
Padurariu, L.
Stanculescu, R.
Baldisserri, C.
Galassi, C.
Mitoseriu, L.
Journal of Applied Physics, 2014, 115 (02)
[7] Erratum: Study of Au/Hg3In2Te6 interface by synchrotron radiation photoemission spectroscopy (Journal of Applied Physics (2013) 114 (083719))
1600, American Institute of Physics Inc. (114):
[8] Erratum: Nucleation rate reduction through stress relief of thermally annealed hydrogenated amorphous silicon films (Journal of Applied Physics (2013) 113 (173509))
1600, American Institute of Physics, 2 Huntington Quadrangle, Suite N101, Melville, NY 11747-4502, United States (114):
[9] Erratum: Amorphous silicon film deposition by low temperature catalytic chemical vapor deposition ( less than or equal 150°C) and laser crystallization for polycrystalline silicon thin-film transistor application (Japanese Journal Applied Physics (2006) 45 (L227))
Lee, Sung-Hyun
Hong, Wan-Shick
Kim, Jong-Man
Lim, Hyuck
Park, Kuyng-Bae
Cho, Chul-Lae
Lee, Kyung-Eun
Kim, Do-Young
Jung, Ji-Sim
Kwon, Jang-Yeon
Noguchi, Takashi
Japanese Journal of Applied Physics, Part 2: Letters, 2006, 45 (17-19):
[10] Erratum: Controllability of self-aligned four-terminal planar embedded metal double-gate lowerature polycrystalline-silicon thin-film transistors on a glass substrate (Japanese Journal of Applied Physics (2016) 55 (03CC01) DOI: 10.7567/JJAP.55.03CC01)
Jpn. J. Appl. Phys., 1600, 12

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