Scintillation from NaI nanoparticles formed in CsI:Na thin films

被引：0

作者：

Nakayama, Masaaki ^{[1
]}

Ando, Naoaki ^{[1
]}

Miyoshi, Takashi ^{[1
]}

Hirai, Jun ^{[1
]}

Nishimura, Hitoshi ^{[1
]}

机构：

[1] Department of Applied Physics, Graduate School of Engineering, Osaka City University, Sugimoto, Sumiyoshi-ku, Osaka 558-8585, Japan

来源：

| 1600年 / Japan Society of Applied Physics卷 / 41期

关键词：

Atomic force microscopy - Electron energy levels - Excitons - Film growth - Heat treatment - Phosphorescence - Scintillation - Semiconductor doping - Sodium compounds - Thin films;

D O I：

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学科分类号：

摘要：

We have investigated the scintillation mechanism of Na-doped CsI (CsI:Na) thin films grown by vacuum deposition from the aspects of their optical and structural properties. It is found from measurements of X-ray excitation luminescence that the Na-related band with the peak energy of 2.95 eV, which is conventionally used for scintillators, is markedly enhanced by heat treatment. The results of atomic force microscope measurements clearly indicate that the heat treatment causes the formation of nanoparticles. Considering the excitation spectrum of the Na-related luminescence, we conclude that the scintillation of CsI:Na originates from the self-trapped exciton in NaI nanoparticles, which presents a novel model of the scintillation mechanisms.

引用

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[1] Scintillation from NaI nanoparticles formed in CsI:Na thin films
Nakayama, M
Ando, N
Miyoshi, T
Hirai, J
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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (3A): : L263 - L265
[2] Scintillation properties of CsI:Na thin films from viewpoint of nanoparticle formation
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