Transient analysis of InGaN/GaN light-emitting diode with varied quantum well number

被引：0
|
作者：
Chen, Gui-Chu [1 ,2 ]
Fan, Guang-Han [1 ]
机构：
[1] Institute of Optoelectronic Material and Technology, South China Normal University, Guangzhou 510631, China
[2] Department of Physics, Zhaoqing University, Zhaoqing 526061, China
来源：
Faguang Xuebao/Chinese Journal of Luminescence | 2013年 / 34卷 / 10期
关键词：
D O I：
10.3788/fgxb20133410.1346
中图分类号：
学科分类号：
摘要：
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页码：1346 / 1350
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