Morphology control for growth of thick epitaxial 4H SiC layers

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作者：
Zhang, J. [1 ]
Ellison, A. [1 ]
Janzén, E. [1 ]
机构：
[1] Dept. of Phys. and Msrmt. Technology, Linköping University, SE-581 83 Linköping, Sweden
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Materials Science Forum | 2000年 / 338卷
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