The Research of High Photon Detection Efficiency CMOS Single Photon Avalanche Diode

被引：3
|
作者：
Wang W. [1 ]
Chen T. [1 ,2 ]
Li J.-F. [2 ]
He Y.-C. [1 ]
Wang G.-Y. [1 ]
Tang Z.-W. [1 ]
Yuan J. [1 ]
Wang G. [1 ]
机构：
[1] International Institute of Semiconductors/College of Electronics Engineering, Chongqing University of Posts and Telecommunications, Chongqing
[2] Institute of Microelectronics of Chinese Academy of Sciences, Beijing
来源：
| 1600年 / Chinese Optical Society卷 / 46期
基金：
中国国家自然科学基金;
关键词：
Breakdown characteristics; Deep n-well; Guard ring; Photon detection efficiency; Responsivity; Single Photon Avalanche Diode (SPAD); Standard 0.18 μm CMOS process;
D O I：
10.3788/gzxb20174608.0823001
中图分类号：
学科分类号：
摘要：
A single photon avalanche diode designed with 0.18um CMOS technology is proposed, with which the weak light in 650~950nm wavelength can effectively detected. The single photon avalanche diode employs a P+/N-well structure, the deeper P+ layer is designed to improve the photon detection efficiency and responsivity in longer light wave; moreover, the increase of the thickness of depletion layer can be got with the use of the low doped deep N well, which can improve the detection sensitivity, and the PN junction formed by deep N well and substrate can effectively isolate substrate in order to reduce substrate noise. The use of P-well as the protection ring can prevent premature edge breakdown phenomenon. The basic structural parameters and process parameters of single photon avalanche diode devices are determined by theoretical analysis, and the device performance is optimized with Silvaco TCAD software. The simulation results show that when the optical window diameter of the device is 10 μm, the avalanche breakdown voltage is 18.4 V, with the illumination of 0.001 W/cm2, the peak of response is of 0.495 A/W at 650 nm will be got. when the reverse bias is excessed the breakdown voltage for 2 V, in the range of 650~950 nm wavelength, the photon detection efficiency is higher than 30%. With the increase of reverse bias, the detection efficiency is improved. © 2017, Science Press. All right reserved.
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  • [1] Yang H.-J., Jin X.-L., Tang L.-Z., Et al., Simulation and analysis of P+/N SPAD for 3D imaging, 2015 IEEE 11th International Conference on ASIC, pp. 1-4, (2015)
  • [2] Korhonen V.O., Myllyla T.S., Kirillin M.Y., Et al., Light propagation in NIR spectroscopy of the human brain, IEEE Journal of Selected Topics in Quantum Electronics, 20, 2, pp. 289-298, (2014)
  • [3] Haensse D., Szabo P., Brown D., Et al., A new multichannel near infrared spectrophotometry system for functional studies of the brain in adults and neonates, Optics Express, 13, 12, pp. 4525-4538, (2005)
  • [4] Sultana A., Kamrani E., Sawan M., CMOS silicon avalanche photodiodes for NIR light detection: a survey, Analog Integrated Circuits and Signal Processing, 70, 1, pp. 1-13, (2012)
  • [5] Kamrani E., Lesage F., Sawan M., Towards on-chip integration of brain imaging photodetectors using standard CMOS process, International Conference of the IEEE Engineering in Medicine & Biology Society, pp. 2668-2671, (2013)
  • [6] Faramarzpour N., Deen M.J., Shirani S., Et al., Fully integrated single photon avalanche diode detector in standard CMOS 0.18-μm technology, IEEE Transactions on Electron Devices, 55, 3, pp. 760-767, (2008)
  • [7] Stoppa D., Mosconi D., Pancheri L., Et al., Single-photon avalanche diode CMOS sensor for time-resolved fluorescence measurements, IEEE Sensors Journal, 9, 9, pp. 1084-1090, (2009)
  • [8] Merhav T., Savuskan V., Nemirovsky Y., Gun muzzle flash detection using CMOS sensors, IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems, pp. 1-4, (2013)
  • [9] Jradi K., Pellion D., Ginhac D., Design, Characterization and analysis of a 0.35-μm CMOS SPAD, 131, 39, pp. 14030-14042, (2014)
  • [10] Malass I., Uhring W., Normand J.P.L., Et al., Evaluation of size influence on performance figures of a single photon avalanche diode fabricated in a 180-nm standard CMOS technology, Analog Integrated Circuits & Signal Processing, 89, 1, pp. 1-8, (2016)
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