Al2O3/HfO2Bilayer Dielectric for Ambipolar SnO Thin-Film Transistors With Superior Operational Stability

被引：0
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作者：
Hong, Ruohao [1 ]
Tian, Qianlei [1 ]
Lin, Jun [1 ]
Wang, Liming [1 ]
Bu, Tong [1 ]
Huang, Hao [2 ]
Qin, Wenjing [1 ,3 ]
Liao, Lei [4 ]
Zou, Xuming [1 ,4 ]
机构：
[1] International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Changsha,410082, China
[2] Guangxi Key Laboratory of Processing for Nonferrous Metals and Featured Material, School of Resources, Environment and Materials, Guangxi University, Nanning,530004, China
[3] School of Physics and Electronics, Hunan Normal University, Changsha,410081, China
[4] State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Semiconductors, College of Integrated Circuits, Hunan University, Changsha,410082, China
来源：
IEEE Transactions on Electron Devices | 2022年 / 69卷 / 08期
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页码：4293 / 4297
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