Effects of amorphous InGaZnO thin film transistors with various buffer layers on polyimide substrate under negative bias-temperature stresses

被引：0
|
作者：
Ok, Kyung-Chul [1 ]
Park, Sang-Hee Ko [2 ]
Hwang, Chi-Sun [2 ]
Shin, Hyun Soo [3 ]
Kim, Daehwan [3 ]
Bae, Jonguk [3 ]
Chin, Byung Doo [4 ]
Park, Jin-Seong [1 ]
机构：
[1] Division of Materials Science and Engineering, Hanyang University, Seoul 133-719, Korea, Republic of
[2] Transparent Electronics Team, ETRI, Daejeon, 305-350, Korea, Republic of
[3] LG Display R and D Center, LG Display Co. Ltd., Paju, 413-811, Korea, Republic of
[4] Polymer Science and Engineering, Dankook University, Yongin, 448-701, Korea, Republic of
来源：
Digest of Technical Papers - SID International Symposium | 2013年 / 44卷 / 01期
关键词：
Amorphous InGaZnO - Device instabilities - Electrical performance - Flexible device - Flexible substrate - Oxide semiconductor thin film transistors - Polyimide substrate - Water penetration;
D O I：
10.1002/j.2168-0159.2013.tb06453.x
中图分类号：
学科分类号：
摘要：
Buffer layers on flexible substrates have strongly affected to electrical performance and instability in oxide TFTs. The oxide TFT on proper buffer layer/PI substrate showed better electrical performance than that on other buffer layers because the buffer layer with high gas diffusion barrier properties can suppress to generate defect states in semiconductor and/or interface from hydrogen and water penetration. The origins of flexible oxide TFT instabilities were systematically investigated by using in-situ/ex-situ measurement and chemical/physical analysis. © 2013 Society for Information Display.
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页码：1229 / 1231
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