Free carrier concentration gradient along the c-axis of a freestanding Si-doped GaN single crystal

被引：0
|
作者：
Yoon, M. [1 ]
Park, Il-Woo [1 ]
Choi, H. [1 ]
Park, Sung Soo [2 ]
Koh, Eui Kwan [1 ]
机构：
[1] Seoul Branch, Korea Basic Science Institute, Seoul 136-701, Korea, Republic of
[2] Samsung Adv. Institute of Technology, P.O. Box 111, Suwon 440-600, Korea, Republic of
来源：
Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap | / 2卷 / 828-831期
关键词：
Compendex;
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摘要：
Carrier concentration - Hydrides - Phonons - Raman scattering - Semiconductor doping - Silicon - Single crystals - Vapor phase epitaxy
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