An InGaAs P-i-N photodiode model: Descripton and implementations in the analysis of the 1.55 μm lightwave system

Using a detailed model of the InGaAs P-i-N photodiode that includes effects caused by the change of bias voltage and effects of the RC parasitic constant, authors describe the implementation of the pulse response of the P-i-N photodiode in the lightwave system model obtaining greater accuracy in comparison to an ideal square-law detector or to the simplified one-pole P-i-N photodiode model. Developed method has been used for the evaluation of the 10 Gbit/s 1.55 μm IM/DD (Intensity Modulation/Direct Detection) digital optical system performance with InGaAs P-i-N photodiode as an optical receiver. The authors also propose the correction factor, the photodiode bandwidth penalty, in the total optical system penalty that describes the influence of the P-i-N photodiode properties on the optical system performance.