Study of IGBT Module Aging Failure Base on Bond Wire Equivalent Resistance

被引：0
|
作者：
Peng Y. [1 ]
Zhou L. [1 ]
Zhang Y. [1 ]
Sun P. [1 ]
Du X. [1 ]
机构：
[1] State Key Laboratory of Power Transmission Equipment & System Security and New Technology, Chongqing University, Chongqing
来源：
Diangong Jishu Xuebao/Transactions of China Electrotechnical Society | 2017年 / 32卷 / 20期
关键词：
Aging; Bond-wire; Equivalent resistance; Insulated gate bipolar transistor (IGBT); Reliability;
D O I：
10.19595/j.cnki.1000-6753.tces.160596
中图分类号：
学科分类号：
摘要：
Literature about the reliability of insulated gate bipolar transistor (IGBT) revealed that bond wire lift-off failure is one of the most dominant factors affecting the reliability of IGBT. This paper proposed a condition monitoring method of IGBT module based on bond-wire equivalent resistance RJ. The theoretical analysis about the relationship between equivalent resistance of bond-wires and turn-off transient-waveform of IGBT was developed at first; and then the equation calculating equivalent resistance was established; finally, the relationship between bond-wire equivalent resistance and lift-off bond wires was analyzed qualitatively and quantitatively through experiments. It is concluded that bond-wire equivalent resistance RJ will increase with the increase of bond-wires lift-off, which validates the feasibility and correctness of the proposed method. © 2017, The editorial office of Transaction of China Electrotechnical Society. All right reserved.
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页码：117 / 123and132
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