Key problems in the preparation of (Ba,Sr)TiO3 thin films by RF magnetron reactive sputter deposition

The processing technology and dielectric properties of (Ba,Sr)TiO3 (BST) thin films have been widely studied because of its promising application as dielectric materials in the fields of microelectronics and microelectro-mechanical system (MEMS), etc. The processing technology determines the dielectric properties (dielectric constant, leakage current density, dielectric strength, etc.) of BST thin films. This paper make a review in some key problems in the preparation technology of BST thin films by RF magnetron reactive sputtering deposition, such as preparation of BST target, optimization of processing parameter, control of thin films composition, and the effects of processing parameters on dielectric properties, etc.