Broadband GaN HEMT microwave integrated circuit for space applications

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作者：
机构：
[1] Osawa, K.
[2] Yoshikoshi, H.
[3] Kodama, A.
[4] Tanaka, T.
[5] Hirata, M.
[6] Satoh, T.
来源：
Osawa, K. | 2018年 / Sumitomo Electric Industries Ltd.卷
关键词：
Microwave integrated circuits - Microwaves - Timing circuits - Gallium nitride - III-V semiconductors - Power amplifiers - Rockets - High electron mobility transistors;
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