Preparation of Phosphorus-Tungsten Oxide Film for Organic Light-Emitting Diode

被引:0
|
作者
Li X. [1 ,2 ]
Deng W. [1 ,2 ]
Wang S. [1 ,2 ]
Xiao Y. [1 ,2 ]
Zhou N. [1 ,2 ]
机构
[1] School of Chemical Engineering and Technology, Tianjin University, Tianjin
[2] Collaborative Innovation Center of Chemical Science and Engineering(Tianjin), Tianjin
基金
中国国家自然科学基金;
关键词
Hole injection layer; Organic light-emitting diode; Phosphorus-tungsten oxide; Spin-coating; Work function adjustment;
D O I
10.11784/tdxbz201804101
中图分类号
学科分类号
摘要
The research on high performance functional materials and new fabrication in organic light-emitting diode(OLED)is always a hotspot of this field. Phosphotungstic acid solution used as a precursor was spin-coated onto indium tin oxide(ITO)anode, followed by an annealing treatment, then a phosphorus-tungsten oxide film was obtained. And work function of phosphorus-tungsten oxide film was adjusted when the film was annealed in different atmosphere. Various parameters which include film composition, surface morphology and optical property were measured by X-ray photoelectron spectroscopy(XPS), atomic force microscope(AFM), and ultra-violet spectrometer, respectively. The phosphorus-tungsten oxide film was used as hole injection layer(HIL), and green OLED with the structure of [ITO/ HIL(35, nm)/ NPB(25, nm)/ C545T: Alq3(40, nm)/ Alq3(15, nm)/ LiF(1, nm)/ Al(100, nm)] was fabricated. It suggests that the phosphorus-tungsten oxide film has the characters of smooth surface, optical transmittance of over 92 %, and work function adjustment. And the performance of device shows turn-on voltage of 3.6, V, maximum luminance of 31, 160, cd/m2, maximum current efficiency of 11.54, cd/A and maximum power efficiency of 4.45, lm/W, respectively. The results provide a new way for exploring HIL materials particularly the transition metal oxide and their deposition process, as well as the application in high performance OLED. © 2019, Editorial Board of Journal of Tianjin University(Science and Technology). All right reserved.
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页码:375 / 382
页数:7
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