Femtosecond laser damage characteristics of Ge-As-Se-Te chalcogenide glass

被引：0
|
作者：
Zhou W. [1 ,2 ]
Ma W. [1 ,2 ]
Li R. [1 ,2 ]
Chu G. [1 ,2 ]
Song B. [1 ,2 ]
Dai S. [1 ,2 ]
Xu T. [1 ,3 ]
Zhang P. [1 ,2 ]
机构：
[1] Laboratory of Infrared Materials and Devices, Faculty of Electrical and Engineering and Computer Science, Ningbo University, Ningbo
[2] Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province, Ningbo
[3] Ningbo Institute of Oceanography, Ningbo
来源：
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering | 2022年 / 51卷 / 04期
关键词：
Chalcogenide glass; Femtosecond lasers; Laser-induced damage threshold (LIDT);
D O I：
10.3788/IRLA20210222
中图分类号：
学科分类号：
摘要：
Ge-As-Se-Te (GAST) chalcogenide glass has ultra-wide transmission range of more than 20 μm, an excellent optical material that can be applied in mid-infrared (MIR) and far-infrared (FIR). In this work, the GexAs40−xSe40Te20 (x=0, 10, 20, 30, 40 mol%) chalcogenide glasses were prepared by the fusion quenching method, and the optical properties were tested. The sample glass was irradiated with femtosecond lasers of different wavelengths (800 nm, 3 μm and 4 μm), different powers and repetition frequencies, and the laser damage characteristics of GAST were studied by scanning electron microscopy (SEM) and Raman spectroscopy. With the increase of Ge content, the laser-induced damage threshold (LIDT) at 800 nm reaches a maximum of 40.16 mJ/cm2 at Ge30As10Se40Te20. The LIDT increase with wavelength of the femtosecond laser and reaches 81.09 mJ/cm2 at 4 μm. In addition, the results show that LIDT will gradually decrease as the number of laser pulses and the repetition rate increase. Copyright ©2022 Infrared and Laser Engineering. All rights reserved.
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