Carrier depth profile of Si/SiGe/Si n-p-n HBT structural materials characterized by electrochemical capacitance-voltage method

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[1] Lin, Y.X.
[2] Huang, D.D.
[3] Zhang, X.L.
[4] Liu, J.P.
[5] Li, J.P.
[6] Gao, F.
[7] Sun, D.Z.
[8] Zeng, Y.P.
[9] Kong, M.Y.
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Lin, Y.X. | 2000年 / Science Press卷 / 21期
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