CMOS devices and technology - characteristics of mobility and threshold voltage in advanced devices

被引:0
|
作者
TSMC [1 ]
不详 [2 ]
机构
关键词
D O I
10.1109/IEDM.2008.4796752
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] High voltage devices in advanced CMOS technologies
    Bianchi, R. A.
    Raynaud, C.
    Blanchet, F.
    Monsieur, F.
    Noblanc, O.
    PROCEEDINGS OF THE IEEE 2009 CUSTOM INTEGRATED CIRCUITS CONFERENCE, 2009, : 363 - 369
  • [2] High voltage devices integration into advanced CMOS technologies
    Bianchi, R. A.
    Monsieur, F.
    Blanchet, F.
    Raynaud, C.
    Noblanc, O.
    IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST, 2008, : 137 - 140
  • [3] Threshold voltage in Ultra Thin FDSOI CMOS : Advanced triple interface model and experimental devices
    Mazellier, J. P.
    Andrieu, F.
    Faynot, O.
    Brevard, L.
    Buj, C.
    Cristoloveanu, S.
    Le Tiec, Y.
    Deleonibus, S.
    ULIS 2008: PROCEEDINGS OF THE 9TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON, 2008, : 31 - +
  • [4] Mobility Enhancement Technology for Scaling of CMOS Devices: Overview and Status
    Yi Song
    Huajie Zhou
    Qiuxia Xu
    Jun Luo
    Haizhou Yin
    Jiang Yan
    Huicai Zhong
    Journal of Electronic Materials, 2011, 40
  • [5] Mobility Enhancement Technology for Scaling of CMOS Devices: Overview and Status
    Song, Yi
    Zhou, Huajie
    Xu, Qiuxia
    Luo, Jun
    Yin, Haizhou
    Yan, Jiang
    Zhong, Huicai
    JOURNAL OF ELECTRONIC MATERIALS, 2011, 40 (07) : 1584 - 1612
  • [6] Silicides for advanced CMOS devices
    Lauwers, A.
    Kittl, J. A.
    van Dal, M. J. H.
    Chamirian, O.
    Pawlak, M. A.
    Torregiani, C.
    Liu, J.
    Benedetti, A.
    Richard, O.
    Bender, H.
    van Berkum, J. G. M.
    Kaiser, M.
    Veloso, A.
    Anil, K. G.
    Potter, M. de
    Maex, K.
    MICROSCOPY OF SEMICONDUCTING MATERIALS, 2005, 107 : 379 - 388
  • [7] Advanced CMOS Devices and Applications
    Lee, Choonghyun
    Zhao, Yi
    ELECTRONICS, 2024, 13 (01)
  • [8] CMOS devices - Mobility enhancement and characterization
    AMD
    不详
    Tech. Dig. Int. Electron Meet. IEDM, 2006,
  • [9] Design and characterization of high voltage devices integrated in a standard CMOS technology
    Villard, B
    Calmon, F
    Gontrand, C
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2001, 16 (02): : 113 - 120
  • [10] High current characteristics of devices in a 0.18μm CMOS technology
    Worley, E
    Salem, A
    Sittampalam, Y
    ELECTRICAL OVERSTRESS/ELECTROSTATIC DISCHARGE SYMPOSIUM PROCEEDINGS, 2000, 2000, : 296 - 307