Optimization of polysilane structure as fast-etching bottom antireflective coating for deep ultraviolet lithography

被引：0
|
作者：
Sato, Yasuhiko [1 ]
Matsuyama, Hideto [1 ]
Onishi, Yasunobu [1 ]
Nakano, Yoshihiko [2 ]
Hayase, Shuji [3 ]
机构：
[1] Proc. and Mfg. Engineering Center, Toshiba Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
[2] Corp. Res. and Development Center, Toshiba Corporation, 1, Komakai Toshiba-cho, Saiwai-ku, Kawasaki 210-0901, Japan
[3] Grad. Sch. of Life Sci./Syst. Eng., Kyushu Institute of Technology, 1-1 Hibikino, Wakamatsu-ku, Kitakyushu 808-01906, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2002年 / 41卷 / 11期
关键词：
D O I：
10.1143/jjap.41.6351
中图分类号：
学科分类号：
摘要：
14
引用
收藏
页码：6351 / 6355
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