Planarized selective regrowth of InP:FE by LP-MOVPE using tertiarybutylchloride for high-speed modulator devices

被引：0
|
作者：
Paraskevopoulos, A. [1 ]
Franke, D. [1 ]
Harde, P. [1 ]
Gouraud, S. [2 ]
Le Pallec, M. [2 ]
Lelarge, F. [2 ]
Decobert, J. [2 ]
机构：
[1] Fraunhofer Institute for Telecommunications, Heinrich-Hertz-Institut, Einsteinufer 37, D-10587 Berlin, Germany
[2] Alcatel CIT, Établissement de Marcoussis, Route de Nozay, 91461 Nozay, France
来源：
Conf Proc Int Conf Indium Phosphide and Relat Mater | 1600年 / 122-125期
关键词：
Compendex;
D O I：
2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM
中图分类号：
学科分类号：
摘要：
Chlorine compounds - Metallorganic vapor phase epitaxy - Modulators - Morphology - Optoelectronic devices - Pressure effects - Reactive ion etching - Semiconductor doping
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