Nonstoichiometry on Raman spectra of VO2 films

被引：0
|
作者：
Yuan, Hong-Tao [1 ,2 ]
Feng, Ke-Cheng [3 ]
Zhang, Xian-Hui [3 ]
机构：
[1] Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
[2] Graduate School, Chinese Academy of Sciences, Beijing 100039, China
[3] Changchun University of Science and Technology, Changchun 130022, China
来源：
Gongneng Cailiao/Journal of Functional Materials | 2006年 / 37卷 / 02期
关键词：
Magnetron sputtering - Stoichiometry - Thin films - Vanadium compounds;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We report on Raman scattering of VO2 films prepared by radio frequency (RF) magnetron sputtering under different conditions. The investigations revealed that the dominated Raman peaks shift towards high frequency for both V-rich and O-rich VO2 films, comparing with the stoichiometry VO2 films. The experimental evidence is presented and the reason for nonstoichiometry dependence on Raman spectra of VO2 films is discussed.
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页码：241 / 242
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