Improved MOSFET model achieves higher accuracy

被引：0
|
作者：
Pearson, Scott [1 ]
Tran, Sylvie [1 ]
Sapp, Steven [1 ]
机构：
[1] Fairchild Semiconductor, San Jose, CA
来源：
Power Electronics Technology | 2007年 / 33卷 / 01期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：14 / 19
相关论文
共 50 条
  • [1] An Improved SPICE Model for a 1.2-kV, 36-A Discrete SiC-MOSFET With Higher Accuracy for a Wide Range of Drain Currents
    Mukunoki, Yasushige
    Horiguchi, Takeshi
    Nakatake, Hiroshi
    Terashima, Tomohide
    Tarutani, Masayoshi
    2019 21ST EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE '19 ECCE EUROPE), 2019,
  • [2] An enhanced marker pattern that achieves improved accuracy in surgical tool tracking
    Cartucho, Joao
    Wang, Chiyu
    Huang, Baoru
    Elson, Dan S.
    Darzi, Ara
    Giannarou, Stamatia
    COMPUTER METHODS IN BIOMECHANICS AND BIOMEDICAL ENGINEERING-IMAGING AND VISUALIZATION, 2022, 10 (04): : 400 - 408
  • [3] An improved MOSFET model for circuit simulation
    Joardar, K
    Gullapalli, KK
    McAndrew, CC
    Burnham, ME
    Wild, A
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (01) : 134 - 148
  • [4] Improved MOSFET model for circuit simulation
    Motorola, Mesa, United States
    IEEE Trans Electron Devices, 1 (134-148):
  • [5] Lossless current sensing technique on MOSFET RDS(on) with improved accuracy
    Lavric, H.
    Fiser, R.
    ELECTRONICS LETTERS, 2010, 46 (05) : 370 - U5481
  • [6] A Datasheet-Driven Nonsegmented Empirical SPICE Model of SiC MOSFET With Improved Accuracy and Convergence Capability
    Yang, Tongtong
    Li, Xianbing
    Yin, Sen
    Wang, Yan
    Yue, Ruifeng
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 70 (01) : 4 - 12
  • [7] An improved HCI degradation model for a VLSI MOSFET
    Tang Yi
    Wan Xinggong
    Gu Xiang
    Wang Wenyuan
    Zhang Huirui
    Liu Yuwei
    JOURNAL OF SEMICONDUCTORS, 2009, 30 (12)
  • [8] An improved HCI degradation model for a VLSI MOSFET
    唐逸
    万星拱
    顾祥
    王文渊
    张会锐
    刘玉伟
    半导体学报, 2009, 30 (12) : 33 - 36
  • [9] Simple minigyro achieves accuracy
    Sheppard, LM
    PHOTONICS SPECTRA, 2000, 34 (02) : 42 - 42
  • [10] Accuracy Preserving Extensions to a PDK MOSFET Model for ESD Simulation
    Zhou, Yujie
    Rosenbaum, Elyse
    2024 46TH ANNUAL EOS/ESD SYMPOSIUM, EOS/ESD 2024, 2024,
12345