Surface Modification of Cu by Atmospheric Pressure Plasma Jet for Micro Discharge Inhibition

被引：0
|
作者：
Cui C. [1 ]
Zhang C. [2 ]
Ren C. [2 ]
Gao Y. [2 ]
Chen G. [1 ]
Shao T. [2 ]
机构：
[1] Department of Electrical Engineering, Zhengzhou University, Zhengzhou, 450001, Henan Province
[2] Key Laboratory of Power Electronics and Electric Drive, Institute of Electrical Engineering, Chinese Academy of Sciences, Haidian District, Beijing
来源：
Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering | 2018年 / 38卷 / 05期
基金：
中国国家自然科学基金;
关键词：
Atmospheric pressure plasma jet; Micro discharge; Surface modification; TiCl[!sub]4[!/sub; TiO[!sub]2[!/sub] film;
D O I：
10.13334/j.0258-8013.pcsee.172023
中图分类号：
学科分类号：
摘要：
The presence of conductor micro-defects may distort the local electric field and cause micro discharge, which seriously affects the insulation safety of the transmission equipment. In this paper, we presented a method for suppressing local micro discharges by plasma deposited films on the conductor surface. The surface of Cu was modified by atmospheric pressure plasma jet excited by AC power supply. TiO2 film was deposited on Cu surface by plasma enhanced chemical vapor deposition using TiCl4 as titanium precursor. The effects of air addition and substrate temperature on the discharge characteristics and the qualities of the deposited films were also discussed. The results show that two current pulse appear during positive half voltage period after air addition, and the current amplitude become smaller. The optimal treatment condition is obtained with substrate heating to 100℃ and air gas flow rate of 40sccm. And in this case, Ti element and O element reached the highest intensity of 18.6% and 43.5% respectively. Furthermore, the film surface microstructure is more uniform and the bonding was more densely. The thickness of film is 349nm after 2 minutes deposition. The film work function test shows that compared with the untreated Cu, the surface work function after deposition has been improved from 4.65eV to 4.87eV. The distribution of the electric field simulation results show that after deposition of film, the maximum field strength at the defect is reduced from 1.4×106V/m to 9.89×105V/m, which has a certain positive effect on the electric field distortion. © 2018 Chin. Soc. for Elec. Eng.
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收藏
页码：1553 / 1561
页数：8
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