Oxide thin film transistors fabricated by solution process

被引：0
|
作者：
Tokumitsu, Eisuke [1 ]
Shimoda, Tatsuya [2 ]
机构：
[1] Green Devices Research Center, Japan Advanced Institute of Science and Technology, Nomi-shi, 923-1292, Japan
[2] School of Materials Science, Japan Advanced Institute of Science and Technology, Nomi-shi, 923-1292, Japan
来源：
Journal of the Institute of Electronics, Information and Communication Engineers | 2014年 / 97卷 / 03期
关键词：
13;
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摘要：
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页码：187 / 192
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