Band-gap change in ordered/disordered GaAs1-ySby layers grown on (001) and (111)B InP substrates

被引：0
|
作者：
Kawamura, Yuichi [1 ,3 ]
Gomyo, Akiko [1 ]
Suzuki, Tohru [2 ]
Higashino, Toshiyuki [1 ]
Inoue, Naohisa [2 ]
机构：
[1] [1,Kawamura, Yuichi
[2] Gomyo, Akiko
[3] Suzuki, Tohru
[4] Higashino, Toshiyuki
[5] Inoue, Naohisa
来源：
Kawamura, Y. (kwmr@riast.osakafu-u.ac.jp) | 1600年 / Japan Society of Applied Physics卷 / 41期
关键词：
Energy gap - Light absorption - Molecular beam epitaxy - Photoluminescence - Reflection high energy electron diffraction - Semiconducting gallium compounds - Semiconducting indium phosphide - Spectrophotometers - Substrates;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
GaAs1-ySby ternary layers were grown on (001) and (111)B InP substrates by molecular beam epitaxy (MBE), and were characterized using optical absorption measurements and transmission electron diffraction (TED) measurements. A marked band-gap change was observed between the GaAsSb layers grown on (001) InP substrate and those grown on (111)B InP substrate. It was found that the band-gap change corresponds to the CuPt-type ordered/disordered structure in GaAsSb layers grown on (001) and (111)B InP substrates.
引用
收藏
相关论文
共 50 条
  • [1] Band-gap change in ordered/disordered GaAs1-ySby layers grown on (001) and (111)B InP substrates
    Kawamura, Y
    Gomyo, A
    Suzuki, T
    Higashino, T
    Inoue, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2002, 41 (4B): : L447 - L449
  • [2] Molecular beam epitaxial growth and characterization of GaAs1-ySby layers on (1111)B InP substrates
    Higashino, T
    Kawamura, Y
    Fujimoto, M
    Kondo, A
    Takasaki, H
    Inoue, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (2B): : 1012 - 1015
  • [3] Band gaps and band offsets in strained GaAs1-ySby on InP grown by metalorganic chemical vapor deposition
    Peter, M
    Herres, N
    Fuchs, F
    Winkler, K
    Bachem, KH
    Wagner, J
    APPLIED PHYSICS LETTERS, 1999, 74 (03) : 410 - 412
  • [4] Impact of strained GaAs spacer between InP emitter and GaAs1-ySby base on structural properties and electrical characteristics of MOCVD-grown InP/GaAs1-ySby/InP DHBTs
    Hoshi, Takuya
    Hashio, Norihide
    Sugiyama, Hiroki
    Yokoyama, Haruki
    Kurishima, Kenji
    Ida, Minoru
    Matsuzaki, Hideaki
    Kohtoku, Masaki
    JOURNAL OF CRYSTAL GROWTH, 2014, 395 : 31 - 37
  • [5] Characteristics of strained GaAs1-ySby (0.16 ≤ y ≤ 0.69) quantum wells on InP substrates
    Huang, J. Y. T.
    Xu, D. P.
    Park, J. H.
    Mawst, L. J.
    Kuech, T. F.
    Song, X.
    Babcock, S. E.
    Vurgaftman, I.
    Meyer, J. R.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (24) : 7656 - 7661
  • [6] Growth of strained GaAs1-ySby and GaAs1-y-zSbyNz quantum wells on InP substrates
    Huang, J. Y. T.
    Xu, D. P.
    Song, X.
    Babcock, S. E.
    Kuech, T. F.
    Mawst, L. J.
    JOURNAL OF CRYSTAL GROWTH, 2008, 310 (7-9) : 2382 - 2389
  • [7] ENERGY BAND-GAP SHIFT WITH ELASTIC STRAIN IN GAXIN1-XP EPITAXIAL LAYERS ON (001) GAAS SUBSTRATES
    ASAI, H
    OE, K
    JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) : 2052 - 2056
  • [8] Reciprocal lattice mapping of InGaAs layers grown on InP (001) and GaAs (001) substrates
    Bak-Misiuk, J
    Kaniewski, J
    Domagala, J
    Reginski, K
    Adamczewska, J
    Trela, J
    EPILAYERS AND HETEROSTRUCTURES IN OPTOELECTRONICS AND SEMICONDUCTOR TECHNOLOGY, 1999, 3725 : 47 - 52
  • [9] GaAs0.5Sb0.5 layers grown on (111) B InP substrates by MBE
    Higashino, T., 2001, Vacuum Society of Japan (44):
  • [10] Type II emission of In0.53Ga0.47As /GaAs1-ySby MQW structures with high Sb mole fraction grown on InP substrates
    Fujimoto, M
    Kawamura, Y
    Harada, H
    Kondo, A
    Higashino, T
    Takasaki, H
    Inoue, N
    PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS, 2001, 2 : 33 - 35
12345