Dielectric properties of β-SiAlON at high temperature using perturbation method

被引：0
|
作者：
Seong, Young-Hoon [1 ]
Kim, Ha Neul [1 ]
Kim, Do Kyung [1 ]
机构：
[1] Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 335 Gwahangno, Yuseong-gu, Daejeon, 305-701, Korea, Republic of
来源：
Key Engineering Materials | 2009年 / 403卷
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D O I：
10.4028/3-908454-00-X.121
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学科分类号：
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页码：121 / 123
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