MOCVD-grown 175 GHz InP/GaAsxSb1-x/InP DHBTs with high current gains using strained and heavily C-doped base layers

被引：0
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作者：
Dvorak, M.W. [1 ]
Matine, N. [1 ]
Watkins, S.P. [1 ]
Bolognesi, C.R. [1 ]
机构：
[1] Simon Fraser Univ, Burnaby, Canada
来源：
| 2000年 / IEEE, Piscataway, NJ, United States卷
关键词：
Electroluminescence - Electron transport properties - Gain measurement - Heterojunction bipolar transistors - Metallorganic chemical vapor deposition - Semiconducting gallium arsenide;
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摘要：
High current gain InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) were implemented with a 200 angstrom thick strained GaAs0.6Sb0.4 highly-doped base layer. Compared to previous work, a tenfold increase in β to the use of a strained As-rich base layer was observed.
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