A Study of Process Interruptions during Pre- and Post-Buffer Layer Epitaxial Growth for Defect Reduction in 4H SiC

被引：0
|
作者：
Rana, Tawhid [1 ]
Wu, Jun [1 ]
Pushkarav, Vladimir [1 ]
Manning, Ian [1 ]
机构：
[1] SK siltron css, 1311 Straits Drive, Bay,MI,48706, United States
来源：
Defect and Diffusion Forum | 2024年 / 434卷
关键词：
1301.4.1 - 1301.4.1.1 - 1301.4.1.2 - 701.1 Electricity: Basic Concepts and Phenomena - 712.1.2 Compound Semiconducting Materials - 802.2 Chemical Reactions - 802.3 Chemical Operations;
D O I：
10.4028/p-1LgGLQ
中图分类号：
学科分类号：
摘要：
10
引用
收藏
页码：123 / 127
相关论文
共 12 条
  • [1] Optimizing the chemical vapor deposition process of 4H -SiC epitaxial layer growth with machine-learning-assisted multiphysics simulations
    Tang, Zhuorui
    Zhao, Shibo
    Li, Jian
    Zuo, Yuanhui
    Tian, Jing
    Tang, Hongyu
    Fan, Jiajie
    Zhang, Guoqi
    CASE STUDIES IN THERMAL ENGINEERING, 2024, 59
  • [2] Thick 4H-SiC Epitaxial Growth and Defect Reduction for Very High Voltage Bipolar Devices
    Miyazawa, Tetsuya
    Tsuchida, Hidekazu
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2013, 2 (08) : N3036 - N3040
  • [3] Study of Defects in 4H-SiC Epitaxy at Various Buffer Layer Growth Conditions
    Rana T.
    Wu J.
    Chung G.
    Moeggenborg K.
    Gave M.
    Defect and Diffusion Forum, 2023, 425 : 63 - 68
  • [4] Reduction of epitaxial defects on 4°-off 4H-SiC homo-epitaxial growth by optimizing in-situ etching process
    Sun, Yongqiang
    Feng, Gan
    Zhang, Jianhui
    Qian, Weining
    Kang, Junyong
    SUPERLATTICES AND MICROSTRUCTURES, 2016, 99 : 145 - 150
  • [5] A Raman imaging study of growth process of few-layer epitaxial graphene on vicinal 6H-SiC
    Kamoi, Susumu
    Kisoda, Kenji
    Hasuike, Noriyuki
    Harima, Hiroshi
    Morita, Kouhei
    Tanaka, Satoru
    Hashimoto, Akihiro
    Hibino, Hiroki
    DIAMOND AND RELATED MATERIALS, 2012, 25 : 80 - 83
  • [6] Reduction of Threading Screw Dislocation Density Utilizing Defect Conversion during Solution Growth of 4H-SiC
    Harada, Shunta
    Yamamoto, Yuji
    Seki, Kazuaki
    Ujihara, Toru
    SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 189 - +
  • [7] Buffer-layer-free growth of high-quality epitaxial GaN films on 4H-SiC substrate by metal-organic chemical vapor deposition
    Jeong, JK
    Choi, JH
    Kim, HJ
    Seo, HC
    Kim, HJ
    Yoon, E
    Hwang, CS
    Kim, HJ
    JOURNAL OF CRYSTAL GROWTH, 2005, 276 (3-4) : 407 - 414
  • [8] Study of Surface Morphology, Impurity Incorporation and Defect Generation during Homoepitaxial Growth of 4H-SiC Using Dichlorosilane
    Song, Haizheng
    Chandrashekhar, M. V. S.
    Sudarshan, Tangali S.
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2015, 4 (03) : P71 - P76
  • [9] Observation of multilayer Shockley-type stacking fault formation during process of epitaxial growth on highly nitrogen-doped 4H-SiC substrate
    Suo, Hiromasa
    Yamashita, Tamotsu
    Eto, Kazuma
    Osawa, Hiroshi
    Kato, Tomohisa
    Okumura, Hajime
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58 (02)
  • [10] On-axis Si-face 4H-SiC epitaxial growth with enhanced polytype stability by controlling micro-steps during the H2 etching process
    Kim, Hyunwoo
    Lee, Hunhee
    Kim, Young Seok
    Lee, Suhyeong
    Kang, Hongjeon
    Heo, Jaeyeong
    Kim, Hyeong Joon
    CRYSTENGCOMM, 2017, 19 (17): : 2359 - 2366
12