Short period InAs/GaSb superlattice infrared detector on GaAs substrates

被引：0
|
作者：
Guo, Jie [1 ,2 ]
Peng, Zhen-Yu [2 ]
Lu, Zheng-Xiong [2 ]
Sun, Wei-Guo [1 ,2 ]
Hao, Rui-Ting [3 ]
Zhou, Zhi-Qiang [3 ]
Xu, Ying-Qiang [3 ]
Niu, Zhi-Chuan [3 ]
机构：
[1] Material School, NorthWest Polytechnical University, Xi'an 710072, China
[2] Luoyang Optoelectronics Institute, Luoyang 471009, China
[3] Institute of Semiconductors, CAS, Beijing 100083, China
来源：
Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves | 2009年 / 28卷 / 03期
关键词：
9;
D O I：
10.3724/sp.j.1010.2009.00165
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：165 / 167
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