An Innovative Sensor for Sensitive Determination of Phenobarbital in Real Samples Using CeO2/CuO/MnO and CeO2/CuO/NiO Ion-Sensitive Field Effect Transistors

Phenobarbital (PB) is a medication prescribedfor insomnia, anxiety, and seizures. PB abuse has danger-ous side effects, and the design of sensors with real-timesensing is critical for its detection. Various methods are usedto measure PB. The electrochemical methods have manyadvantages, and the use of nanomaterials has increased theirefficiency. However, the classical electrochemical methodshave a variety of production standards, making it nearlyimpossible to mass produce the three-electrode design andintegrate it into another system for these intentions. Theion-sensitive field effect transistor (ISFET) was developed toovercome such limitations. In this study, ISFET-based ceriumdioxide/copper oxide/manganese oxide (CeO2/CuO/MnO) andCeO(2)/CuO/nickel oxide (CeO2/CuO/NiO) were evaluated forthe IR ability to measure PB for the first time. Based onour results, the limit of detection (LOD) and sensitivityfor CeO2/CuO/MnO (CCM) were 4.79 mu M and 58.6 mu A/mM,respectively. In comparison, the LOD and sensitivity ofCeO(2)/CuO/NiO (CCN) were 1.18 mu M and 150.8 mu A/mM,respectively. The better results with the CCN sensing layerwere attributed to better catalytic activity, conductivity, and electron transfer ability of nickel oxide (NiO) compared withmanganese oxide (MnO). However, both sensors could measure PB in urine and can be used in clinical applications.