Ohmic contact to p-GaN using a strained InGaN contact layer and its thermal stability

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作者：
Kumakura, Kazuhide [1 ]
Makimoto, Toshiki [1 ]
Kobayashi, Naoki [1 ]
机构：
[1] NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
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| 1600年 / Japan Society of Applied Physics卷 / 42期
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