Junction Temperature Measurement of IGBT Based on Combined Short-circuit Current That Not Affected by Aging Effect

被引:0
|
作者
Yang S. [1 ]
Sun P. [1 ]
Du X. [1 ]
Liu A. [1 ]
Luo Q. [1 ]
Li Z. [2 ]
机构
[1] State Key Laboratory of Power Transmission Equipment & System Security and New Technology, Chongqing University, Shapingba District, Chongqing
[2] Equipment Management Department of State Grid Chongqing Electric Power Company, Shapingba District, Chongqing
关键词
Bond wire ageing; Combined short-circuit current; Insulated gate bipolar transistor (IGBT); Junction temperature measurement; Temp-sensitive parameter;
D O I
10.13334/j.0258-8013.pcsee.200818
中图分类号
学科分类号
摘要
The accurate on-line measurement of the junction temperature of IGBT is of great significance for the study of thermal management and reliability of power converter. However, most of the temperature sensitive parameters are affected by the aging of the device, which cannot accurately describe the junction temperature information of the device in the aging process. When the short-circuit current is used as the temperature sensitive parameter, the measurement results are affected by the aging of the bond wire of the device. Therefore, this paper proposed a method of measuring junction temperature of IGBT module based on combined short-circuit current, which can eliminate the effect of aging of bond wire. The aging effect of bond wire on the junction temperature measurement method was analyzed by theoretical analysis and simulated wire cutting experiment and an experimental platform was built to verify the feasibility of the proposed method in the operation of converter. Theoretical analysis and experimental results show that the proposed method can not only eliminate the aging effect of bond wire on junction temperature measurement, but also has the advantages of good linearity, good sensitivity and on-line measurement. © 2020 Chin. Soc. for Elec. Eng.
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页码:5770 / 5778
页数:8
相关论文
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