A comparative study of wet etching and contacts on (2¯01) and (010) oriented β-Ga2O3

被引:0
|
作者
机构
[1] Jang, Soohwan
[2] Jung, Sunwoo
[3] Beers, Kimberly
[4] Yang, Jiancheng
[5] Ren, Fan
[6] Kuramata, A.
[7] Pearton, S.J.
[8] Baik, Kwang Hyeon
来源
Baik, Kwang Hyeon (khbaik@hongik.ac.kr) | 1600年 / Elsevier Ltd卷 / 731期
关键词
Number: -, Acronym: DOD, Sponsor: U.S. Department of Defense, Number: HDTRA1-17-1-011, Acronym: DTRA, Sponsor: Defense Threat Reduction Agency, Number: -, Acronym: NEDO, Sponsor: New Energy and Industrial Technology Development Organization, Number: 2015R1D1A1A01058663,2017R1D1A3B03035420, Acronym: MOE, Sponsor: Ministry of Education, Number: 2015M3A7B7045185, Acronym: MSIP, Sponsor: Ministry of Science, ICT and Future Planning, Number: -, Acronym: NRF, Sponsor: National Research Foundation of Korea,;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] A comparative study of wet etching and contacts on ((2)over-bar01) and (010) oriented β-Ga2O3
    Jang, Soohwan
    Jung, Sunwoo
    Beers, Kimberly
    Yang, Jiancheng
    Ren, Fan
    Kuramata, A.
    Pearton, S. J.
    Baik, Kwang Hyeon
    JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 731 : 118 - 125
  • [2] Wet Etching of β-Ga2O3 Substrates
    Oshima, Takayoshi
    Okuno, Takeya
    Arai, Naoki
    Kobayashi, Yasushi
    Fujita, Shizuo
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (04)
  • [3] Oxidized Metal Schottky Contacts on (010) β-Ga2O3
    Hou, Caixia
    Gazoni, Rodrigo M.
    Reeves, Roger J.
    Allen, Martin W.
    IEEE ELECTRON DEVICE LETTERS, 2019, 40 (02) : 337 - 340
  • [4] Wet etching in β-Ga2O3 bulk single crystals
    Jin, Zhu
    Liu, Yingying
    Xia, Ning
    Guo, Xiangwei
    Hong, Zijian
    Zhang, Hui
    Yang, Deren
    CRYSTENGCOMM, 2022, 24 (06) : 1127 - 1144
  • [5] Wet chemical and plasma etching of Ga2O3(Gd2O3)
    Ren, F
    Hong, M
    Mannaerts, JP
    Lothian, JR
    Cho, AY
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (09) : L239 - L241
  • [6] Performance of in situ oxidized platinum/iridium alloy Schottky contacts on (001), ( 2 over bar 01), and (010) β-Ga2O3
    Dela Cruz, Z.
    Hou, C.
    Martinez-Gazoni, R. F.
    Reeves, R. J.
    Allen, M. W.
    APPLIED PHYSICS LETTERS, 2022, 120 (08)
  • [7] Selective Wet and Dry Etching of NiO over β-Ga2O3
    Chiang, Chao-Ching
    Xia, Xinyi
    Li, Jian-Sian
    Ren, Fan
    Pearton, S. J.
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2022, 11 (10)
  • [8] Wet chemical etching behavior of β-Ga2O3 single crystal
    Ohira, Shigeo
    Arai, Naoki
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9, 2008, 5 (09): : 3116 - 3118
  • [9] Subsurface-damaged layer in (010)-oriented β-Ga2O3 substrates
    Yamaguchi, Hirotaka
    Watanabe, Shinya
    Yamaoka, Yu
    Koshi, Kimiyoshi
    Kuramata, Akito
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2020, 59 (12)
  • [10] Depletion-Mode Ga2O3 MOSFETs on β-Ga2O3 (010) Substrates with Si-Ion-Implanted Channel and Contacts
    Higashiwaki, Masataka
    Sasaki, Kohei
    Wong, Man Hoi
    Kamimura, Takafumi
    Krishnamurthy, Daivasigamani
    Kuramata, Akito
    Masui, Takekazu
    Yamakoshi, Shigenobu
    2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2013,