The low resistive and transparent Al-doped SnO2 films: P-type conductivity, nanostructures and photoluminescence

被引：0
|
作者：
Benouis, C.E. [1 ]
Benhaliliba, M. [1 ]
Mouffak, Z. [2 ]
Avila-Garcia, A. [3 ]
Tiburcio-Silver, A. [4 ]
Ortega Lopez, M. [5 ]
Romano Trujillo, R. [5 ]
Ocak, Y.S. [6 ]
机构：
[1] Department of Material Technology, Physics Faculty, USTOMB University, BP1505 Oran, Algeria
[2] Department of Electrical, Computer Engineering California State University, Fresno, CA, United States
[3] Cinvestav-IPN, Dept. Ingeniería Eléctrica, SEES, Apdo. Postal 14-740, 07000 México, D.F., Mexico
[4] ITT, DIE, Apdo. Postal 20, Metepec 3, 52176 Estado de Mexico, Mexico
[5] Centro de Investigación en Dispositivos Semiconductores, Instituto de Ciencias-BUAP, 14 Sur y Av., San Claudio, C.U. Puebla, Pue, Mexico
[6] Dicle University, Education Faculty, Science Department, 21280 Diyarbakir, Turkey
来源：
Journal of Alloys and Compounds | 2014年 / 603卷
关键词：
Atomic force microscopy;
D O I：
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摘要：
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页码：213 / 223
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